21. Determine the conductivity of a semi-conductor
22.Determine the number of electrons in conduction band in terms of band gap EG and also find the number of holes in valence band.
- Write a procedure to find the number of electrons in the conduction band of a semiconductor.
- Derive an expression for the total number of holes in a semiconductor.
- What is intrinsic concentration of charge carriers in a semiconductor?
- Derive an expression for carrier concentration in terms of band gap (EG).
- Write a short note on conductivity and mobility of semiconductor material.
- Derive a mathematical expression for electrical conductivity.
- What do you mean by relaxation time, collision time and mean free path.
- What is Fermi level? How does it depend on temperature?
- Derive an expression for Schrodinger wave equation.
- Derive the expression for conductivity of a semiconductor.
- What is basic crystal growth technique?
- How mobility of carriers does depend on temperature and doping concentration?
- Determine the total current in a semiconductor.
- Derive an expression for Fermi-Dirac energy distribution
- Copper has a density of 8.96 gm/cm3 and an atomic weight of 63.5.Calculate the distance in between. The Avogadro’s number is 6.02 x 1023.
- Find the miller indices for a plane when the intercepts along the axes are 2a, 3b and 2c.
- Resistivity of a sample semiconductor is 9 milli-ohm-meter. Its holes have mobility of 0.03m2/V-S. Calculate the value of Hall co-efficient of the sample.
- Find the magnitude of Hall Voltage VH in an N-type germanium bar having majority carrier concentration ND= 1017/cm3. Assume BZ=0.1Wb/m2, w=d=4mm, Ex=5V/cm and μ=3800 cm2/V-S.
- An N- type germanium sample has a donor density of 1021/m3. It is arranged in a Hall experiment having magnetic field of 0.2T (Wb/m2) and the current density is 600A/m2. Determine the Hall Voltage if d=4mm.
- In a certain copper conductor the current density is 2.4A/m2 and electron density is 5x1028 free electrons per m3 of the copper. Determine the drift velocity of the electrons.
- Determine the concentration of holes in Si crystals having donor concentration of 1.4X10 24/m3. When the intrinsic carrier concentration is 1.4X10 18 /m3. Find the ratio of electron to hole concentration.
- Find the miller indices of a set of parallel planes which make the intercepts in the ratio 4a, on the X and Y axes and are parallel to the Z-axes, a, b, and c being primitive vectors of the lattice.
- In a crystal whose primitives are 1.2A, 1.8A and 2.0A. A plane (231) cuts an intercepts 1.2A on x axis. Find the corresponding intercepts on the y and z axes.
- It is given that ni at 300K in Si is 1.5X1010/cm3 and the mobilities of electrons and holes in Si are 1300 cm2/V-S and 500cm2/V-S respectively. (a) Find the conductivity of intrinsic semiconductor Si at300K.
(b) If donor type impurity is added to the extent of impurity atom in 108 silicon atoms, find the conductivity.
(c) If acceptor impurity is added to the extent of 1 impurity atom in 108 silicon atoms, find the conductivity.
47. An electric field of 200v/m is applied to a sample of N-type semiconductor whose Hall coefficient is 0.0145m2 /coulomb. Calculate the current density in the sample assuming μe=0.36/V-s.
--Er. Mohd. Shahid Mansoori "Ajnabi"
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